| 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1997
Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method
Authors: S. Botti, and L.C. Andreani
Ref.: Phys. Rev. B 63, 2353133 (2001)
Abstract: The linear combination of bulk bands method recently introduced by Wang, Franceschetti, and Zunger [Phys. Rev. Lett. 78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)n/(AlAs)n and (GaAs)n/(vacuum)n (001) superlattices with n ranging from 4 to 20. Empirical pseudopotentials are used for the calculation of the bulk energy bands. Quantum-confinement-induced shifts of critical point energies are calculated and are found to be larger for the GaAs/vacuum system. The E1 peak in the absorption spectra has a blueshift and splits into two peaks for decreasing superlattice period; the E2 transition instead is found to be split for large-period GaAs/AlAs superlattices. The band contribution to linear birefringence of GaAs/AlAs superlattices is calculated and compared with recent experimental results of Sirenko et al. [Phys. Rev. B 60, 8253 (1999)]. The frequency-dependent part reproduces the observed increase with decreasing superlattice period, while the calculated zero-frequency birefringence does not account for the experimental results and points to the importance of local-field effects.
Citations: 12 (Google scholar)
DOI: 10.1103/PhysRevB.63.235313
Bibtex:
@article{Botti_2001,
doi = {10.1103/physrevb.63.235313},
url = {https://doi.org/10.1103%2Fphysrevb.63.235313},
year = 2001,
month = {may},
publisher = {American Physical Society ({APS})},
volume = {63},
number = {23},
author = {S. Botti and L. C. Andreani},
title = {Electronic states and optical properties of {GaAs}/{AlAs} and {GaAs}/vacuum superlattices by the linear combination of bulk bands method},
journal = {Physical Review B}
}