2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1997
Topological Crystalline Insulator in a New Bi Semiconducting Phase
Authors: F. Munoz, M.G. Vergniory, T. Rauch, J. Henk, E.V. Chulkov, I. Mertig, S. Botti, M.A.L. Marques, and A.H. Romero
Ref.: Sci. Rep. 6, 21790 (2016)
Abstract: Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a Z2 strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
Citations: 10 (Google scholar)
DOI: 10.1038/srep21790
Bibtex:
@article{Munoz_2016,
doi = {10.1038/srep21790},
url = {https://doi.org/10.1038%2Fsrep21790},
year = 2016,
month = {feb},
publisher = {Springer Science and Business Media {LLC}},
volume = {6},
number = {1},
author = {F. Munoz and M. G. Vergniory and T. Rauch and J. Henk and E. V. Chulkov and I. Mertig and S. Botti and M. A. L. Marques and A. H. Romero},
title = {Topological Crystalline Insulator in a New Bi Semiconducting Phase},
journal = {Scientific Reports}
}